Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlASsb heterostructures

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 2, 2004, Pages 368-371

  Mozume, T ^a   Georgier, N ^a,b   Kasai, J ^a  

^a WASEDA UNIVERSITY   (Japan)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; DIMERS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL COMMUNICATION; OPTICAL DEVICES; PHONONS; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

INTERFACE QUALITY; PHOTON ENERGIES;

HETEROJUNCTIONS;

EID: 85039577213     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303964     Document Type: Conference Paper

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