Ultralow intersubband absorption saturation intensity at communication wavelength achieved in novel strain compensated InGaAs/AlAs/AlAsSb quantum wells grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5500-5507

  Mozume, Teruo ^a   Kasai, Jun Ichi ^a   Georgiev, Nikolai ^a   Simoyama, Takasi ^a   Gopal, Achanta Venu ^a   Yoshida, Haruhiko ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

All optical switch; Carrier carrier scattering rate; Dephasing time; Electron LO phonon scattering rate; InGaAs AlAs AlAsSb; Intersubband transition; Quantum well; Saturation intensity

Indexed keywords

BAND STRUCTURE; ELECTRON SCATTERING; ELECTRON TRANSITIONS; GROUND STATE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; OPTICAL PROPERTIES; OPTICAL SWITCHES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN RATE;

CARRIER-CARRIER SCATTERING RATE; DEPHASING TIME; INTERSUBBAND TRANSITION; NONLINEAR OPTICAL RESPONSES; PHONON SCATTERING RATE; SATURATION INTENSITY; ULTRALOW INTERSUBBAND ABSORPTION SATURATION INTENSITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0344494563     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5500     Document Type: Article

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