Interface control of InGaAs/AlAsSb heterostructures

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 249-251

  Mozume, T ^a   Georgiev, N ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ALUMINUM ARSENIC ANTIMONIDE; INTERFACE CONTROL;

HETEROJUNCTIONS;

EID: 0034513985     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01517-0     Document Type: Article

References (8)

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6. Mozume T., Georgiev N., Nishimura T., Yoshida H., Nishikawa S., Neogi A. J. Cryst. Growth. 209:2000;445-449.
7. Georgiev N., Mozume T. J. Cryst. Growth. 209:2000;247-251.
8. Van de Walle C.G. Phys. Rev. B39:1989;1871-1883.