Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells

IEEE Journal of Quantum Electronics

Volumn 39, Issue 2, 2003, Pages 299-305

  Gopal, Achanta Venu ^a   Yoshida, Haruhiko ^a   Simoyama, Takasi ^a   Georgiev, Nikolai ^a   Mozume, Teruo ^a   Ishikawa, Hiroshi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

All optic switch; Antimony based quantum wells; Intersubband transition; Relaxation time; Saturation intensity; Switching energy

Indexed keywords

MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; OPTICAL SWITCHES; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SATURATION INTENSITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037320410     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.807181     Document Type: Article

References (32)

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