Optical and structural characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1008-1011

  Mozume, Teruo ^a   Georgiev, Nikolai ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

InGaAs AlAsSb; Inter diffusion; Photoluminescence; Quantum wells; Secondary ion mass spectrometry

Indexed keywords

DIFFUSION IN SOLIDS; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; PHOTODEGRADATION; PHOTOLUMINESCENCE; QUANTUM OPTICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

INTERSUBBAND TRANSITIONS (ISBT);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036478763     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1008     Document Type: Conference Paper

References (15)