Raman scattering analysis of InGaAs/AlAsSb short-period superlattices

Applied Surface Science

Volumn 159, Issue , 2000, Pages 520-527

  Georgiev, Nikolai ^a   Mozume, Teruo ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

INTERFACE MIXING; SHORT-PERIOD SUPERLATTICES (SL);

SEMICONDUCTOR SUPERLATTICES;

EID: 0034206106     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00084-2     Document Type: Article

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