Nonlinearity and recovery time of 1.55 μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

Electronics Letters

Volumn 37, Issue 2, 2001, Pages 129-130

  Akiyama, T ^a   Georgiev, N ^a   Mozume, T ^a   Yoshida, H ^a   Venu Gopal, A ^a   Wada, O ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; ULTRAFAST PHENOMENA;

ALUMINUM ARSENIC ANTIMONIDE; ALUMINUM ARSENIDE; INTERSUBBAND ABSORPTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035138659     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010087     Document Type: Article

References (8)

1. ASANO, T., NODA, S., ABE, T., and SASAKI, A.: 'Near-infrared intersubband transitions in InGaAs/A1As quantum wells on GaAs substrate', Jpn. J. Appl. Phys., 1996, 35, pp. 1285-1291
2. MOZUME, T., YOSHIDA, H., NEOGI, A., and KUDO, M.: '1.45μm intersubband absorption in InGaAs/A1AsSb grown by molecular beam epitaxy', Jpn. J. Appl. Phys., 1999, 36, (28), pp. 1286-1289
3. GMACHL, C., NG, H.M., and CHO, A.Y.: 'Intersubband absorption in GaN/A1GaN multiple quantum wells in the wavelength range of λ ∼ 1.75 - 4.2μm', Appl. Phys. Lett., 2000, 77, pp. 334-336
4. IIZUKA, N., KANEKO, K., SUZUKI, N., ASANO, T., NODA, S., and WADA, O.: 'Ultrafast intersubband relaxation (= 150fs) in A1GaN/ GaN multiple quantum wells', Appl. Phys. Lett., 2000, 77, pp. 648-650
5. ASANO, T., NODA, S., and TOMODA, K.: 'Pump and probe measurement of intersubband relaxation time in short-wavelength intersubband transition', Appl. Phys. Lett., 1999, 74, pp. 1418-1420
6. YOSHIDA, H., MOZUME, T., NEOGI, A., GEORGIEV, N., AKIYAMA, T., and WADA, O.: 'Ultrafast all-optical switching using near-infrared intersubband transitions in InGaAs/A1AsSb quantum well structures'. Conf. Lasers and Electro-Optics, 2000, pp. 357-358
7. ASANO, T., and NODA, S.: 'Relaxation time of short wavelength intersubband transition in InGaAs/A1As quantum wells', Jpn. J. Appl. Phys., 1998, 37, pp. 6020-6024
8. YOSHIDA, H., MOZUME, T., NEOGI, A., and WADA, O.: 'Ultrafast all-optical switching at 1.3μm/1.55μm using novel InGaAs/A1AsSb/ InP coupled double quantum well structure for intersubband transitions', Electron. Lett., 1999, 35, pp. 1103-1105