Surface smoothness and step bunching on GaAs (111)B facets formed by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 4038-4039

  Nakamura, Yusui ^a,b   Tanaka, Ichiro ^a,b   Takeuchi, Norishige ^c   Koshiba, Shyun ^a,b   Noge, Hiroshi ^a,b   Sakaki, Hiroyuki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NIKON CORPORATION   (Japan)

Author keywords

(111)B facet; Atomic force microscopy; GaAs trapezoidal structure; Multi atomic step; Step bunching

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; GALLIUM; MICROSCOPIC EXAMINATION; SEMICONDUCTOR QUANTUM WIRES; SURFACE PROPERTIES;

MULTI-ATOMIC STEP; STEP BUNCHING;

EPITAXIAL GROWTH;

EID: 0030194804     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4038     Document Type: Article

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