Laser operation at room temperature of self-organized in0.1Ga0.9As/(GaAs)6(AlAs)1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1672-1674

  Ohno, Yasuhide ^a   Higashiwaki, Masataka ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a   Ikawa, Seiji ^b  

^a OSAKA UNIVERSITY   (Japan)

^b KUBOTA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CURRENT DENSITY; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; LASER RESONATORS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

QUANTUM WIRE LASERS; SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH);

SEMICONDUCTOR LASERS;

EID: 0034187664     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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