In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 824-827

  Hiyamizu, S ^a   Ohno, Y ^a   Higashiwaki, M ^a   Shimomura, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

FULL-WITH AT HALF-MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032657093     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01449-3     Document Type: Article

References (8)

1. Higashiwaki M., Yamamoto M., Shimomura S., Hiyamizu S. Appl. Phys. Lett. 71:1997;2005.
2. Kapon E., Hwang D.M., Bhat R. Phys. Rev. Lett. 63:1989;430.
3. Kapon E., Simhony S., Bhat R., Hwang D.M. Appl. Phys. Lett. 55:1989;2715.
4. Wegscheider W., Pfeiffer L.N., Pinczuk A., West K.W., Dignam M.M., Hull R., Leibenguth R.E. J. Crystal Growth. 150:1995;285.
5. Tomita N., Takekawa K., Ohta K., Shimomura S., Hiyamizu S., Fujita K., Egami N., Okamoto Y. J. Vac. Sci. Technol. B. 16:1998;575.
6. Higashiwaki M., Shimomura S., Hiyamizu S., Ikawa S. Appl. Phys. Lett. 74:1999;780.
7. S. Hiyamizu, M. Higashiwaki, M. Yamamoto, S. Shimomura, Mater. Sci. Eng. B, in press.
8. Higashiwaki M., Yamamoto M., Higuchi T., Shimomura S., Adachi A., Okamoto Y., Sano N., Hiyamizu S. Jpn. J. Appl. Phys. 35:1996;L606.