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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 62-66

Transformation of GaAs (0 0 1)-(1 1 1)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates

(6) Koshiba, S a Nakamura, Y b Noda, T b Watanabe, S c Akiyama, H c Sakaki, H b

a KAGAWA UNIVERSITY (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

Diffusion; Facet structure; Growth; MBE

Indexed keywords

DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

FACET STRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035398897 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00633-9 Document Type: Conference Paper

Times cited : (6)

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