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Volumn 227-228, Issue , 2001, Pages 970-974
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Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy
a
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Author keywords
A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III V materials; B2. Semiconducting indium compounds
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Indexed keywords
BAND STRUCTURE;
CRYSTAL ORIENTATION;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
STACKING FAULTS;
SUBSTRATES;
POLARIZATION DEGREE;
SEMICONDUCTOR QUANTUM WIRES;
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EID: 0035398163
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00961-7 Document Type: Conference Paper |
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Times cited : (4)
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References (22)
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