Formation of uniform GaAs multi-atomic steps with 20-30 nm periodicity and related structures on vicinal (111)B planes by MBE

Journal of Electronic Materials

Volumn 27, Issue 11, 1998, Pages 1240-1243

  Nakamura, Y ^a,b   Tanaka, Ichiro ^a,b   Takeuchi, N ^c   Koshiba, S ^a,b   Sakaki, H ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NIKON CORPORATION   (Japan)

Author keywords

(111)B; GaAs; Multi atomic steps; Two dimensional electron gas (2DEG)

Indexed keywords

ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH;

MULTIATOMIC STEPS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032208523     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0076-5     Document Type: Article

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