Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0 0 0 1)

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 367-372

  Dimakis, E ^a,b   Tsagaraki, K ^a,b   Iliopoulos, E ^a,b   Komninou, Ph ^c   Kehagias, Th ^c   Delimitis, A ^c   Georgakilas, A ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

A1. High resolution X ray diffraction; A1. Interfaces; A1. Stresses; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; NUCLEATION; RESIDUAL STRESSES; SEMICONDUCTING FILMS; STRAIN; TENSILE STRESS; X RAY DIFFRACTION ANALYSIS;

GROWTH RATES; HIGH RESOLUTION X-RAY DIFFRACTION; RESIDUAL STRAIN; ROOM TEMPERATURE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18444369056     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.034     Document Type: Conference Paper

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