Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 143-146

  Neuberger, Ralph ^a   Müller, Gerhard ^a   Eickhoff, Martin ^b   Ambacher, Oliver ^b   Stutzmann, Martin ^b  

^a IFT INSTITUT FÜR THERAPIEFORSCHUNG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

AlGaN; GaN; HEMT; Ion; Surface

Indexed keywords

ELECTRIC CURRENTS; ELECTRON GAS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; NEGATIVE IONS; POLARIZATION; POSITIVE IONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE TREATMENT;

CHANNEL CURRENTS; ION-INDUCED CHANGES;

GALLIUM NITRIDE;

EID: 0037198506     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00053-3     Document Type: Conference Paper

References (10)