Influence of plasma heating of wafer substrates on SiO2 deposition rate in a TEOS/O2 high-density plasma CVD system

Vacuum

Volumn 74, Issue 1, 2004, Pages 99-104

  Kinoshita, Haruhisa ^a   Otaka, Naoki ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Deposition rate; Plasma CVD; Plasma heating; SiO2; Supermagnetron plasma

Indexed keywords

HEAT CONDUCTION; MAGNETIC FIELDS; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON WAFERS; SUBSTRATES;

DEPOSITION RATE; PLASMA CVD; SIO2; SUPERMAGNETRON PLASMA;

PLASMA HEATING;

EID: 1842842916     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.071     Document Type: Article

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