Analysis of the negative ion characteristics of O2 supermagnetron plasma for submicron etching use

Vacuum

Volumn 55, Issue 3, 1999, Pages 219-222

  Kinoshita, Haruhisa ^a   Honda, Masahiro ^b   Tatsuta, Toshiaki ^b   Sakiya, Fumio ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

^c Rorze Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC PROPERTIES; OXYGEN; PLASMA ETCHING; PLASMAS; VOLTAGE MEASUREMENT;

RADIOFREQUENCY VOLTAGE; SELF BIAS VOLTAGE; SUPERMAGNETRON PLASMA GENERATION; SUPERMAGNETRON PLASMA GENERATOR;

NEGATIVE IONS;

EID: 0033331725     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00154-2     Document Type: Article

References (12)

1. Suzuki T, Kasuya T. Phys Rev A 1987;36:2129.
2. Amemiya H. J Phys D: Appl Phys 1990;23:999.
3. Howling AA, Dorier J-L, Hollenstein Ch. Appl Phys Lett 1993;62:1341.
4. Lin Y, Overzet LJ. Appl Phys Lett 1993;62:675.
5. Passchier JDP, Geedheer WJ. J Appl Phys 1993;73:1073.
6. Toyoda H, Takahashi S, Ohkubo M, Ichihara K, Sugai H. Proc Symp Plasma Processing Tokyo 1996;13:415.
7. Kinoshita H, Matsumoto O. J Vac Sci Technol B 1991;9:325.
8. Kinoshita H, Nomoto K. J Vac Sci Technol A 1992;10:1092.
9. Kinoshita H. J Appl Phys 1994;75:1354.
10. Lieberman MA, Lichtenberg AJ. Principles of plasma discharges and materials processing. New York: Wiley, 1994.
11. Suzuki T, Kasuya T. Appl Phys B 1990;51:374.
12. Shibata M, Makabe T, Nakano N. Jpn J Appl Phys 1995;34:6230.