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Thin Solid Films

Volumn 347, Issue 1-2, 1999, Pages 112-116

Calculation of apparent activation energy for the deposition of TEOS-SiO2 films by PECVD

(1) Kim, Min Tae a

a Korea Electric Power Research Institute (KEPRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISSOCIATION; ELECTRONS; HYDROCARBONS; MATHEMATICAL MODELS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; PRESSURE; SILICA; SURFACES; TEMPERATURE;

DEPOSITION RATE; DISCHARGE POWER; ELECTRON INDUCED DISSOCIATION MODEL; ISOBARIC PLASMA; ORGANO SILANE FILM PRECURSORS; TETRAETHYLORTHOSILICATE;

THIN FILMS;

EID: 0345201745 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01730-1 Document Type: Article

Times cited : (7)

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