An example of fault site localization on a 0.18 μm CMOS device with combination of front and backside techniques

Microelectronics Reliability

Volumn 44, Issue 5, 2004, Pages 771-778

  Yamada, Yoshiteru ^a   Komoda, Hirotaka ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; LIQUID CRYSTALS; LSI CIRCUITS; MICROSCOPIC EXAMINATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON; STATIC RANDOM ACCESS STORAGE; SUBSTRATES; WSI CIRCUITS;

FAULT LOCALIZATION TECHNIQUES; OPTICAL BEAM INDUCED CURRENT (OBIC);

CMOS INTEGRATED CIRCUITS;

EID: 1842842321     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.01.011     Document Type: Article

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