Near IR Absorption in Heavily Doped Silicon - An Empirical Approach

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2000, Pages 121-127

  Falk, R Aaron ^a  

^a OptoMetrix Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY GAP; INFRARED TRANSMISSION; LASER APPLICATIONS; LIGHT REFLECTION; PHONONS; PHOTONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

ABSORPTION COEFFICIENTS; FREE CARRIERS ABSORPTION;

SEMICONDUCTING SILICON;

EID: 1542330761     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. P. Tangyunyong and D. Barton, Sandia National Laboratories, private communication.
2. S.E. Aw, H.S. Tan, and C.K. Ong, "Optical Absorption Measurements of Band-Gap Shrinkage in Moderately and Heavily Doped Silicon," J. Phys. Condensed Matter 3, 8213-23 (1991)
3. J. Wagner, "Photoluminescence and Excitation Spectroscopy in Heavily Doped n- and p-type Silicon," Phys. Rev. B 29, 2002-9 (1984)
4. A. Borgheshi, Chen Chen-Jai, G. Guizzetti, F. Marabelli, L. Nosenzo, E. Regussoni, A. Stella, and P. Ostoja, "Infra-Red Properties of Bulk Heavily Doped Silicon," II Nuovo Cimento 5D, 292-303 (1985)
5. G. e. Jellison, Jr. F. A. Modine, C. W. White, R. F. Wood, and R. T. Young, " Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eV," Phys. Rev. Letters 46, 1414-7 (1981)