Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETs

IEEE Transactions on Semiconductor Manufacturing

Volumn 14, Issue 2, 2001, Pages 170-172

  Tee, K C ^a   Prasad, K ^b   Lee, C S ^a   Gong, H ^c   Cha, C L ^c   Chan, L ^a   See, A K ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Contamination; Copper; MOSFET; Silicon

Indexed keywords

ANNEALING; COPPER; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; SILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

SATURATION CURRENT;

CONTAMINATION;

EID: 0035334254     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.920729     Document Type: Article

References (13)

1. Aspects of copper electroplating for on-chip interconnects
2. Integration of SALI-CIDE process for deep submicrometer CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
3. Diffusion and solubility of copper in extrinsic and intrinsic germanium, silicon, and gallium arsenide
4. Low temperature gettring of Cu, Ag, and Au across wafer of Si by Al
5. On the formation of copper-rich silicides
6. 2 range on the performance of junction diodes
7. Redistribution of Cu contamination in advanced high-speed CMOS and its influence on device characteristics
8. The effect of copper contamination of field overlap edges and perimeter junction leakage current
9. Influence of interstitial copper on diffusion length and minority lifetime of carriers in p-type silicon
10. The importance of understanding of the physics of copper in silicon for development and characterization of copper diffusion barriers
11. Copper contamination induced degradation of MOSFET characteristics and reliability
12. Copper contamination effect on the reliability of devices in the BiCMOS technology