Cu contamination induced degradation mechanism of embedded flash cell

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 715-718

  Isobe, K ^a   Kanda, M ^a   Murakami, T ^a   Tosuka, K ^a   Moriuchi, M ^a   Miyoshi, T ^a   Yamada, S ^a   Noguchi, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONTAMINATION; COPPER; DATA TRANSFER; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; LOGIC DEVICES; STRESSES; THRESHOLD VOLTAGE;

DATA RETENTION; DEGRADATION MECHANISM; EMBEDDED FLASH CELL; FOWLER NORDHEIM CURRENT STRESS; GATE STRESS; HOT ELECTRON INJECTION; SYSTEM ON A CHIP; TUNNEL OXIDE;

FLASH MEMORY;

EID: 0035716618     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Copper contamination induced degradation of MOSFET characteristics and reliability
2. Stress-induced low-level leakage mechanism in ultrathin silicon dioxide firms caused by neutral oxide trap generation
3. Degradation mechanism of flash EEPROM programming after program/erase cycles