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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 562-565

Calibration of the arsenic mole fraction in MBE grown GaAsySb1-y and AlxGa1-xAsySb1-y (y < 0.2)

(4) Selvig, E a Fimland, B O a Skauli, T b Haakenaasen, R b

a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

b NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI (Norway)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B1. Gallium compounds

Indexed keywords

MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ANTIMONIDES; MOLE FRACTIONS;

SEMICONDUCTOR LASERS;

EID: 18244428747 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00772-2 Document Type: Conference Paper

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.