Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 15-22

  Genty, Frédéric ^a,b   Almuneau, Guilhem ^a   Bertru, Nicolas ^a   Chusseau, Laurent ^a   Grech, Pierre ^a   Cot, Didier ^c   Jacquet, Joel ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

Aluminium gallium arsenic antimonide compounds; Distributed bragg reflector; Molecular beam epitaxy

Indexed keywords

CRYSTAL DEFECTS; DESORPTION; INTERFACES (MATERIALS); LIGHT REFLECTION; MIRRORS; MOLECULAR BEAM EPITAXY; REFLECTOMETERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

DISTRIBUTED BRAGG REFLECTORS; SEMICONDUCTING ALUMINUM GALLIUM ARSENIC ANTIMONIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031649091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00397-7     Document Type: Article

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