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Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 113-116

Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy

(4) Almuneau, G a Hall, E a Mathis, S a Coldren, L A a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; COMPOSITION EFFECTS; CRYSTAL LATTICES; MIRRORS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

ALUMINUM GALLIUM ARSENIDE ANTIMONIDE; VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033909282 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00438-8 Document Type: Article

Times cited : (20)

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