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Journal of Crystal Growth

Volumn 173, Issue 1-2, 1997, Pages 5-13

In situ composition control of III-As1-xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometry

(3) Kaspi, R a Cooley, W T a,b Evans, K R a

a AIR FORCE RESEARCH LABORATORY (United States)

b AIR FORCE INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; FEEDBACK CONTROL; GALLIUM ALLOYS; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING FILMS; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

QUADRUPOLE MASS SPECTROMETERS (QMS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031546923 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00781-6 Document Type: Article

Times cited : (23)

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