Al(As,Sb) heterobarriers on InAs: Growth, structural properties and electrical transport

Journal of Crystal Growth

Volumn 187, Issue 1, 1998, Pages 18-28

  Blank, H R ^a   Mathis, S ^a   Hall, E ^a   Bhargava, S ^a   Behres, A ^b   Heuken, M ^b   Kroemer, H ^a   Narayanamurti, V ^a  

^a University of California   (United States)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Electrical transport; Molecular beam epitaxy; Semiconductor heterostructures

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE; THERMAL EFFECTS;

HETEROBARRIERS; MISCIBILITY GAP;

MOLECULAR BEAM EPITAXY;

EID: 0032473758     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00851-8     Document Type: Article

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