Extremely low surface recombination velocity in GaInAsSbAlGaAsSb heterostructures

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Wang, C A ^a   Shiau, D A ^a   Donetsky, D ^b   Anikeev, S ^b   Belenky, G ^b   Luryi, S ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRAPPING; PHOTON RECYCLING; SURFACE RECOMBINATION VELOCITY; THERMOPHOTOVOLTAIC (TPV) DEVICES;

CARRIER CONCENTRATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17944378953     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1873042     Document Type: Article

References (19)

1. R. K. Ahrenkiel, in Semiconductors and Semimetals, edited by, R. K. Ahrenkiel, and, M. S. Lundstrom, (Academic, New York, 1993), Vol. 39, p. 39.
2. P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).
3. T. J. Coutts, G. Guazzoni, and J. Luther, Semicond. Sci. Technol. 18, S144 (2003).
4. C. A. Wang, H. K. Choi, S. L. Ransom, G. W. Charache, L. R. Danielson, and D. M. DePoy, Appl. Phys. Lett. 75, 1305 (1999).
5. H. K. Choi, C. A. Wang, G. W. Turner, M. J. Manfra, D. L. Spears, G. W. Charache, L. R. Danielson, and D. M. DePoy, Appl. Phys. Lett. 71, 3758 (1997).
6. D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, C. A. Wang, and G. Nichols, Appl. Phys. Lett. 81, 4769 (2002).
7. C. A. Wang, C. J. Vineis, H. K. Choi, M. K. Connors, R. K. Huang, L. R. Danielson, G. Nichols, G. W. Charache, D. Donetsky, S. Anikeev, and G. Belenky, AIP Conf. Proc. 653, 324 (2003).
8. Z. A. Shellenbarger, G. C. Taylor, R. K. Smeltzer, J. L. Li, R. U. Martinelli, and K. Palit, AIP Conf. Proc. 653, 314 (2003).
9. O. J. Pitts, S. P. Watkins, C. X. Wang, V. Fink, and K. L. Kavanagh, J. Cryst. Growth 254, 28 (2003).
10. C. A. Wang, D. A. Shiau, M. K. Connors, L. R. Danielson, G. Nichols, D. Donetsky, S. Anikeev, and G. Belenky, Mater. Res. Soc. Symp. Proc. 763, 315 (2003).
11. B. R. Bennett, B. V. Shanabrook, and M. E. Twigg, J. Appl. Phys. 85, 2157 (1999).
12. R. M. Biefeld, D. M. Follstaedt, S. R. Kurtz, and K. C. Baucom, Inst. Phys. Conf. Ser. 144, 13 (1995).
13. J. Wagner, J. Schmitz, D. Behr, J. D. Ralston, and P. Koidl, Appl. Phys. Lett. 65, 1293 (1994).
14. C. A. Wang, H. K. Choi, and G. W. Charache, IEE Proc.: Optoelectron. 147, 193 (2000).
15. C. A. Wang, H. K. Choi, D. C. Oakley, and G. W. Charache, J. Cryst. Growth 195, 346 (1998).
16. C. A. Wang, J. Cryst. Growth 170, 725 (1997).
17. P. Asbeck, J. Appl. Phys. 48, 820 (1977).
18. S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C. A. Wang, J. M. Borrego, and G. Nichols, Appl. Phys. Lett. 83, 3317 (2003).
19. D. Donetsky, S. Anikeev, N. Gu, G. Belenky, S. Luryi, C. A. Wang, D. A. Shiau, M. Dashiell, J. Beausang, and G. Nichols, AIP Conf. Proc. 738, 320 (2004).