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Applied Physics Letters

Volumn 72, Issue 12, 1998, Pages 1475-1477

Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

(6) Gradinaru, G a Khan, M Asif a Kao, N C a Sudarshan, T S a Chen, Q b Yang, J b

a University of South Carolina (United States)

b APA Optronics (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013401062 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120597 Document Type: Article

Times cited : (11)

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