Mechanical strain and defect distributions in GaAs-based diode lasers monitored during operation

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Tien, Tran Quoc ^a   Tomm, Jens W ^a   Oudart, Myriam ^b   Nagle, Julien ^b  

^a MAX BORN INSTITUT   (Germany)

^b THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DEFECTS; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; STRAIN; SUBSTRATES;

COMPRESSIVE STRAIN; CREATION SCENARIOS; EXTRINSIC PARAMETERS; HEATSPREADER;

SEMICONDUCTOR LASERS;

EID: 17944362899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1883716     Document Type: Article

References (17)

1. P. G. Eliseev, Reliability Problems of Semiconductor Lasers (Nova Science Publishers, Commack, 1991).
2. M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs (Artech House Inc., Boston, London, 1991).
3. O. Ueda, Reliability and Degradation of III-V-Optical Devices (Artech House Inc., Boston, London, 1996).
4. P. G. Eliseev, Prog. Quantum Electron. 20, 1 (1996).
5. J. W. Tomm, A. Gerhardt, T. Elsaesser, D. Lorenzen, and P. Henning, Appl. Phys. Lett. 81, 3269 (2002).
6. R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dods, A. V. Andrianov, J. Morgan, and J. P. Landesman, Photonics Technology Letters 14, 893 (2002).
7. J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, Appl. Phys. Lett. 73, 3908 (1998).
8. J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, A. Gerhardt, and J. Donecker, D. Lorenzen, and F. X. Daiminger, S. Weiß, M. Hutter, E. Kaulfersch, and H. Reichl, Appl. Phys. Lett. 86, 1196 (1999).
9. P. Martin, J. P. Landesman, J. P. Hirtz, and A. Fily, Appl. Phys. Lett. 75, 2521 (1999).
10. J.-P. Landesman, Mater. Sci. Eng., B 91-92, 55 (2002).
11. We use the term, 'deep level defect' as the denotation of a point defect in a semiconductor that is not described by the effective mass approximation.
12. J. W. Tomm, A. Gerhardt, R. Müller, V. Malyarchuk, Y. Sainte-Marie, P. Galtier, J. Nagle, and J.-P. Landesman, J. Appl. Phys. 93, 1848 (2003).
13. Mark L. Biermann, Steven Duran, Kelsey Peterson, Axel Gerhardt, Jens W. Tomm, Witold Trzeciakowski, and Artem Bercha, J. Appl. Phys. 96, 4056 (2004).
14. The microscopic origin of these defects is not known at this stage of investigation.
15. J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, Appl. Phys. Lett. 73, 3908 (1998).
16. J. W. Tomm, LEOS Newsletter 13, 20 (1999).
17. P. W. Epperlein, A. Fried, and A. Jakubowicz, Inst. Phys. Conf. Ser. 112, 567 (1990).