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IEEE Photonics Technology Letters

Volumn 14, Issue 7, 2002, Pages 893-895

Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

(7) Xia, R a Larkins, E C a Harrison, I a Dods, S R A a,b Andrianov, A a,c Morgan, J a,d Landesman, J P e

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b Optiwave Corporation (Canada)

c IOFFE INSTITUTE (Russian Federation)

d Domino UK Ltd (United Kingdom)

e THALES (France)

Author keywords

Failure analysis; Laser reliability; Photoluminescence microscopy; Reliability testing; Semiconductor device reliability; Semiconductor lasers; Strain; Stress

Indexed keywords

AGING OF MATERIALS; FAILURE ANALYSIS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; STRAIN; STRESSES;

RELIABILITY TESTING;

HIGH POWER LASERS;

EID: 0036648297 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/LPT.2002.1012376 Document Type: Article

Times cited : (34)

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