Simultaneous quantification of strain and defects in high-power diode laser devices

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3269-3271

  Tomm, J W ^a   Gerhardt, A ^a   Elsaesser, T ^a   Lorenzen, D ^b   Hennig, P ^b  

^a MAX BORN INSTITUT   (Germany)

^b JENOPTIK Laserdiode GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; DEFECT CREATION; HEAT SPREADERS; HIGH-POWER DIODE LASER ARRAYS; HIGH-POWER DIODE LASERS; INALGAAS; LASER TRANSITION; MODEL CALCULATIONS; OPTIMIZED SOLUTIONS; PACKAGING-INDUCED STRAIN; PHOTOCURRENT SPECTROSCOPY; SPECTRAL SHIFT; STRAIN PROFILES; STRAIN-INDUCED DEFECTS; SUB-BANDS;

DIODES; LASERS; PACKAGING; SEMICONDUCTOR LASERS;

DEFECTS;

EID: 79956024850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1514390     Document Type: Article

References (12)

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