The 1/f Noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 365-368

  Vandamme, L K J ^a   Casier, H J ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; GEOMETRY; GOLD; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

BORON IMPLANTS; FITTING PARAMETERS; POLY CRYSTALLINE RESISTORS; SHEET RESISTANCE;

ELECTRIC RESISTANCE;

EID: 17644371709     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)

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21. th European Solid State Device Research Conference: pp 648-651