On the basic correlation between polysilicon resistor linearity, matching and 1/f noise

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 648-651

  Da Rold, M ^a   Van Huylenbroeck, S ^a   Knuts, B ^a   Simoen, E ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

POLYSILICON;

1/F NOISE; ANALOG APPLICATIONS; CROSS CORRELATIONS; ELECTRICAL PARAMETER; POLYSILICON RESISTORS; PROCESS CONDITION; VOLTAGE LINEARITY;

RESISTORS;

EID: 84907906964     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Kamins, Polycrystalline Silicon For Integrated Circuit Applications, Kluwer Accdemic Publishers, Boston, 1988.
2. H.C. de Graff and T.M. Huybers, "Iff noise in polycrystalline silicon resistors", J. Appl. Phys., 54, pp 2504-2507, 1983.
3. R. Thewes et al., "Explanation and Quantitative Model for the Matching Behavior of Poly-Silicon Resistors", Proc. IEDM 1998, 771
4. F.N. Hooge, "lIf noise is no surface effect", Phys. Lett. A, 29, pp. 131-141, 1969.
5. R. Brederlow et aI., "A Physically Based Model for Low Frequency Noise in Poly-Silicon resistor", Proc. IEDM 1998