SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1715-1724

1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations

(4) Chen, X Y a Salm, C b Hooge, F N a Woerlee, P H b

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b UNIVERSITY OF TWENTE (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRON SCATTERING; GRAIN BOUNDARIES; HALL EFFECT; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SILICA; SILICON WAFERS; SPURIOUS SIGNAL NOISE;

HALL MOBILITY; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033185161 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(99)00136-7 Document Type: Article

Times cited : (14)

References (25)

1
- 0006457672
- Grimmeiss H.G., Olajos J., Engvall J. Acta Phys Polonica A. 88:1995;567.
- (1995) Acta Phys Polonica A , vol.88 , pp. 567
- Grimmeiss, H.G.¹ Olajos, J.² Engvall, J.³

2
- 0029373287
- Konig U., Dambkes H. Solid-State Electron. 38:1995;1595.
- (1995) Solid-State Electron , vol.38 , pp. 1595
- Konig, U.¹ Dambkes, H.²

3
- 85031525084
- H.C. de Graaff, & H. van Kranenburg.
- Salm C., van Veen D.T., Holleman J., Woerlee P.H. de Graaff H.C., van Kranenburg H., Proc. of ESSDERC, The Hague. 1995;131.
- (1995) Proc. of ESSDERC, The Hague , pp. 131
- Salm, C.¹ Van Veen, D.T.² Holleman, J.³ Woerlee, P.H.⁴

4
- 0003097732
- New York: IEEE
- King Tsu-Jae, Pfiester J.R., Shott J.D., McVittie J.P., Saraswat K.C. Proc. of IEDM. 1990;253 IEEE, New York.
- (1990) Proc. of IEDM , pp. 253
- King Tsu-Jae¹ Pfiester, J.R.² Shott, J.D.³ McVittie, J.P.⁴ Saraswat, K.C.⁵

5
- 0020751212
- de Graaff H.C., Huybers M.T.M. J Appl Phys. 54:1982;2504.
- (1982) J Appl Phys , vol.54 , pp. 2504
- De Graaff, H.C.¹ Huybers, M.T.M.²

6
- 0025404176
- Luo M.Y., Bosman G. IEEE Trans Electron Devices. 37:1990;768.
- (1990) IEEE Trans Electron Devices , vol.37 , pp. 768
- Luo, M.Y.¹ Bosman, G.²

7
- 0025482446
- Jang S.L. Solid-State Electron. 33:1990;1155.
- (1990) Solid-State Electron , vol.33 , pp. 1155
- Jang, S.L.¹

8
- 0028473943
- Luo M.Y., Bosman G. Solid-State Electron. 37:1994;1453.
- (1994) Solid-State Electron , vol.37 , pp. 1453
- Luo, M.Y.¹ Bosman, G.²

9
- 0001677504
- Madenach A.J., Werner J.H. Phys Rev B. 38:1988;13150.
- (1988) Phys Rev B , vol.38 , pp. 13150
- Madenach, A.J.¹ Werner, J.H.²

10
- 0000073947
- D'yakonova N.V., Levinshtein M.E., Rumyantsev S.L. Sov Phys Semiconductors. 25:1991;1241.
- (1991) Sov Phys Semiconductors , vol.25 , pp. 1241
- D'yakonova, N.V.¹ Levinshtein, M.E.² Rumyantsev, S.L.³

11
- 21544434131
- Hooge F.N., Kleinpenning T.G.M., Vandamme L.K.J. Rep Prog Phys. 44:1981;479.
- (1981) Rep Prog Phys , vol.44 , pp. 479
- Hooge, F.N.¹ Kleinpenning, T.G.M.² Vandamme, L.K.J.³

12
- 0026835540
- Ren L., Hooge F.N. Phys B. 176:1992;209.
- (1992) Phys B , vol.176 , pp. 209
- Ren, L.¹ Hooge, F.N.²

13
- 0030216339
- Chen X.Y., Leys M.R. Solid-State Electron. 39:1996;1149.
- (1996) Solid-State Electron , vol.39 , pp. 1149
- Chen, X.Y.¹ Leys, M.R.²

14
- 0028550128
- Hooge F.N. IEEE Trans Electron Devices. 41:1994;1926.
- (1994) IEEE Trans Electron Devices , vol.41 , pp. 1926
- Hooge, F.N.¹

15
- 0000573926
- Westra K.L., Thomson D.J. J Vac Sci Technol B. 12:1994;3176.
- (1994) J Vac Sci Technol B , vol.12 , pp. 3176
- Westra, K.L.¹ Thomson, D.J.²

16
- 0001508990
- Manku T., McGregor J.M., Nathan A., Roulston D.J., Noel J.-P., Houghton D.C. IEEE Trans Electron Devices. 40:1990;1993.
- (1990) IEEE Trans Electron Devices , vol.40 , pp. 1993
- Manku, T.¹ McGregor, J.M.² Nathan, A.³ Roulston, D.J.⁴ Noel, J.-P.⁵ Houghton, D.C.⁶

17
- 0029534184
- Mchedlidie T.R., Yonenaga I., Matsui A., Sumino K. Mater Sci Forum. 196-201:1995;353.
- (1995) Mater Sci Forum , vol.196-201 , pp. 353
- Mchedlidie, T.R.¹ Yonenaga, I.² Matsui, A.³ Sumino, K.⁴

18
- 0018546472
- Vandamme L.K.J., de Kuijper A.H. Solid-State Electron. 22:1979;981.
- (1979) Solid-State Electron , vol.22 , pp. 981
- Vandamme, L.K.J.¹ De Kuijper, A.H.²

19
- 0018032498
- Baccarani G., Ricco B., Spadini G. J Appl Phys. 49:1978;5565.
- (1978) J Appl Phys , vol.49 , pp. 5565
- Baccarani, G.¹ Ricco, B.² Spadini, G.³

20
- 0006493584
- Fripp A.L., Sedgwick T.O. J Electrochem Soc. 120:1978;145.
- (1978) J Electrochem Soc , vol.120 , pp. 145
- Fripp, A.L.¹ Sedgwick, T.O.²

21
- 0031251115
- Salm C., van Veen D.T., Gravesteijn D.J., Holleman J., Woerlee P.H. J Electrochem Soc. 144:1997;3665.
- (1997) J Electrochem Soc , vol.144 , pp. 3665
- Salm, C.¹ Van Veen, D.T.² Gravesteijn, D.J.³ Holleman, J.⁴ Woerlee, P.H.⁵

22
- 0004205669
- Boston: Kluwer Academic publishers
- Kamins T.I. Polycrystalline silicon for integrated circuit applications. 2nd ed. 1988;Kluwer Academic publishers, Boston.
- (1988) Polycrystalline Silicon for Integrated Circuit Applications 2nd Ed.
- Kamins, T.I.¹

23
- 0016597193
- Seto J.Y.W. J Appl Phys. 46:1975;5247.
- (1975) J Appl Phys , vol.46 , pp. 5247
- Seto, J.Y.W.¹

24
- 0017453673
- Jacoboni C., Canali C., Ottaviani G., Alberigi Quaranta A. Solid-State Electron. 20:1977;77.
- (1977) Solid-State Electron , vol.20 , pp. 77
- Jacoboni, C.¹ Canali, C.² Ottaviani, G.³ Alberigi Quaranta, A.⁴

25
- 0023861887
- Sasaki Y., Itoh K., Inoue E., Kishi S., Mitsuishi T. Solid-State Electron. 31:1988;5.
- (1988) Solid-State Electron , vol.31 , pp. 5
- Sasaki, Y.¹ Itoh, K.² Inoue, E.³ Kishi, S.⁴ Mitsuishi, T.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.