Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

Journal of Chemical Physics

Volumn 122, Issue 10, 2005, Pages

  Dai, L ^a   Liu, S F ^a   Fu, Z X ^b   You, L P ^a   Zhu, J J ^b   Lin, B X ^b   Zhang, J C ^c   Qin, G G ^a  

^a PEKING UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSION; EXCITON BINDING ENERGY; GAN PYRAMIDS; ISOELECTRONIC;

CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; LASER APPLICATIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 17444375731     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861880     Document Type: Article

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