Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

Journal of Crystal Growth

Volumn 219, Issue 3, 2000, Pages 199-204

  Zhang, Y C ^a   Huang, C J ^a   Liu, F Q ^a   Xu, B ^a   Ding, D ^a   Jiang, W H ^a   Li, Y F ^a   Ye, X L ^a   Wu, J ^a   Chen, Y H ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; EMISSION SPECTROSCOPY; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17344379613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00669-2     Document Type: Article

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