Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 630-636

  Wang, H L ^a   Ning, D ^a   Feng, S L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON EMISSION; EMISSION SPECTROSCOPY; GROUND STATE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

BIMODAL SIZE DISTRIBUTION; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033900466     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00740-X     Document Type: Article

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