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Volumn 74, Issue 13, 1999, Pages 1839-1841

Storage of electrons and holes in self-assembled InAs quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; ENERGY GAP; LIGHT ABSORPTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0039448201     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123686     Document Type: Article
Times cited : (44)

References (14)
  • 14
    • 85034156961 scopus 로고    scopus 로고
    • to be published
    • The redshift of the photoluminescence with respect to the transmission results from the above-barrier pumping used to excite the photoluminescence. Under these conditions, the dots are fully occupied with electrons. See R. J. Warburton et al., in Festkörperprobleme/Advances in Solid-State Physics (to be published).
    • Festkörperprobleme/Advances in Solid-state Physics
    • Warburton, R.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.