XPS analysis of ultrathin SiO2 film growth on Si by ozone

Surface and Interface Analysis

Volumn 30, Issue 1, 2000, Pages 497-501

  Ichimura, S ^a   Koike, K ^b   Kurokawa, A ^a   Nakamura, K ^a   Itoh, H ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Iwatani International Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MONOLAYERS; OXIDATION; OZONE; REACTION KINETICS; SEMICONDUCTING SILICON; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRATHIN OXIDE FILMS;

SILICA;

EID: 0034245080     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200008)30:1<497::AID-SIA791>3.0.CO;2-0     Document Type: Article

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