-
2
-
-
0038575223
-
SOC CMOS technology for personal Internet products
-
March
-
D. Buss, B. Evans, J. Bellay, W. Krenik, B. Haroun, D. Leipold, K. Maggio J-Y. Yang & T. Moise: "SOC CMOS Technology for Personal Internet Products", IEEE Trans Electron Devices, March 2003, pp 546-556.
-
(2003)
IEEE Trans Electron Devices
, pp. 546-556
-
-
Buss, D.1
Evans, B.2
Bellay, J.3
Krenik, W.4
Haroun, B.5
Leipold, D.6
Maggio, K.7
Yang, J.-Y.8
Moise, T.9
-
3
-
-
0034430270
-
A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
-
R. Scheuerlein, W. Gallagher, S. Parkin, S. Ray, R. Robertazzi, W. Reohr, "A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell," Tech. Papers Digest, ISSCC 2000, p. 128
-
Tech. Papers Digest, ISSCC 2000
, pp. 128
-
-
Scheuerlein, R.1
Gallagher, W.2
Parkin, S.3
Ray, S.4
Robertazzi, R.5
Reohr, W.6
-
4
-
-
0036110780
-
Ovonic unified memory - A high-perfonnance nonvolatile memory technology for stand-alone memory and embedded memory applications
-
M. Gill, T. Lowrey & J. Park, "Ovonic Unified Memory - A High-Perfonnance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Memory Applications", ISSCC 2002 Digest of Technical Papers, pp 202-2-202-3.
-
ISSCC 2002 Digest of Technical Papers
-
-
Gill, M.1
Lowrey, T.2
Park, J.3
-
5
-
-
17644435882
-
Electrical properties of submicron Ir/PZT/Ir capacitors formed on W plugs
-
T. Moise, S. Summerfelt, G. Xing, L. Colombo, T. Sakoda, S. Gilbert, A. Loke, S. Ma, R. Kavari, L. Wills, T. Hsu, J. Amano, S. Johnstron, D. Vestyck, M. Russell, and S. Bilodeau, "Electrical Properties of Submicron Ir/PZT/Ir Capacitors Formed on W Plugs" IEEE Technical Digest, 1999, p. 940.
-
(1999)
IEEE Technical Digest
, pp. 940
-
-
Moise, T.1
Summerfelt, S.2
Xing, G.3
Colombo, L.4
Sakoda, T.5
Gilbert, S.6
Loke, A.7
Ma, S.8
Kavari, R.9
Wills, L.10
Hsu, T.11
Amano, J.12
Johnstron, S.13
Vestyck, D.14
Russell, M.15
Bilodeau, S.16
-
6
-
-
6644226557
-
A 76mm2 8Mb chain ferroelectric memory
-
D. Takashima, Y. Takeuchi, T. Miyakawa, Y. Itoh, R. Ogiwara, M. Kamoshida, K. Hoya, S. Doumae, R. Ozaki, H. Kanaya, K. Yamanaka, I. Kunishima, and Y. Oowaki, "A 76mm2 8Mb Chain Ferroelectric Memory," IEEE J. Sol. State Circuits, Vol. 36, #11, 2001. p. 1713.
-
(2001)
IEEE J. Sol. State Circuits
, vol.36
, Issue.11
, pp. 1713
-
-
Takashima, D.1
Takeuchi, Y.2
Miyakawa, T.3
Itoh, Y.4
Ogiwara, R.5
Kamoshida, M.6
Hoya, K.7
Doumae, S.8
Ozaki, R.9
Kanaya, H.10
Yamanaka, K.11
Kunishima, I.12
Oowaki, Y.13
-
8
-
-
18244414879
-
Demonstration of a 4Mb high-density ferroelectric memory embedded within a 130nm, 5LM, Cu/FSG logic process
-
Submitted for publication in
-
T. Moise et al., "Demonstration of a 4Mb High-Density Ferroelectric Memory Embedded within a 130nm, 5LM, Cu/FSG Logic Process," Submitted for publication in IEDM 2002.
-
IEDM 2002
-
-
Moise, T.1
-
9
-
-
0012256590
-
Retention after fatigue of ferroelectric memories
-
D. Hadnagy, D. Dalton, B. Thomas, S. Sun, and R. Bailey, "Retention after Fatigue of Ferroelectric Memories", Integrated ferroelectrics, 2001, Vol 37, pp 215-223.
-
(2001)
Integrated Ferroelectrics
, vol.37
, pp. 215-223
-
-
Hadnagy, D.1
Dalton, D.2
Thomas, B.3
Sun, S.4
Bailey, R.5
-
10
-
-
0033325117
-
Device issues in the integration of analog/RF functions in deep submicron digital CMOS
-
D. D. Buss, "Device Issues in the Integration of Analog/RF Functions in Deep Submicron Digital CMOS" IEEE Technical Digest Dec (1999), p. 423.
-
(1999)
IEEE Technical Digest Dec
, pp. 423
-
-
Buss, D.D.1
-
11
-
-
0036105696
-
An embedded 0.8V/480μW 6B/22MHz flash ADC in 0.13um digital CMOS process using nonlinear double interpolation technique
-
J. Lin & B. Haroun: "An Embedded 0.8V/480μW 6B/22MHz Flash ADC in 0.13um Digital CMOS Process using Nonlinear Double Interpolation Technique", ISSCC 2002 Digest of Technical Papers.
-
ISSCC 2002 Digest of Technical Papers
-
-
Lin, J.1
Haroun, B.2
-
12
-
-
0036104771
-
A 1.5V, 2.4/2.9mW, 79/50dB DR ΣΔ A/D for GSM/WBCDMA in 0.13um digital process
-
G. Gomez & B. Haroun: "A 1.5V, 2.4/2.9mW, 79/50dB DR ΣΔ A/D for GSM/WBCDMA in 0.13um Digital Process", ISSCC 2002 Digest of Technical Papers.
-
ISSCC 2002 Digest of Technical Papers
-
-
Gomez, G.1
Haroun, B.2
-
13
-
-
20144388210
-
0.1 um RFCMOS on high resistivity substrate for System on Chip (SOC) application
-
to be published
-
J-Y. Yang, K. Benaissa, D. Crenshaw, B. Williams, S. Sridhar, J. Ai, G. Boselli, S. Zhou, S-P. Tsang, N. Mahalingam, S. Ashburn, P. Madhani, T. Blythe and H. Shichijo, "0.1 um RFCMOS on High Resistivity Substrate for System on Chip (SOC) Application", IEDE Technical Digest, 2002, to be published.
-
(2002)
IEDE Technical Digest
-
-
Yang, J.-Y.1
Benaissa, K.2
Crenshaw, D.3
Williams, B.4
Sridhar, S.5
Ai, J.6
Boselli, G.7
Zhou, S.8
Tsang, S.-P.9
Mahalingam, N.10
Ashburn, S.11
Madhani, P.12
Blythe, T.13
Shichijo, H.14
-
14
-
-
0038714252
-
RFCMOS on high resistivity substrates for System on Chip (SOC) applications
-
March
-
K. Benaissa, J-Y Yang, D. Crenshaw, B. Williams, S. Sridhar, J. Ai, G. Boselli, S. Zhao, S-P Tang, S. Ashburn, P. Madhani, T. Blythe, M. Nandakumar, and H. Shichijo, "RFCMOS on High Resistivity Substrates for System on Chip (SOC) Applications", IEEE Tran. Elec. Dev., March 2003, pp 567-576.
-
(2003)
IEEE Tran. Elec. Dev.
, pp. 567-576
-
-
Benaissa, K.1
Yang, J.-Y.2
Crenshaw, D.3
Williams, B.4
Sridhar, S.5
Ai, J.6
Boselli, G.7
Zhao, S.8
Tang, S.-P.9
Ashburn, S.10
Madhani, P.11
Blythe, T.12
Nandakumar, M.13
Shichijo, H.14
-
15
-
-
0035689536
-
A 0.18um foundry RF CMOS technology with 70GHz ft for single chip system solutions
-
H-M. Shu et al, "A 0.18um Foundry RF CMOS Technology with 70GHz ft for Single Chip System Solutions", 2001 IEEE MTT-S Digest, pp 1869-1872.
-
2001 IEEE MTT-S Digest
, pp. 1869-1872
-
-
Shu, H.-M.1
-
16
-
-
0035425125
-
High-voltage drain extended MOS transistors for 0.18 m logic CMOS process
-
Aug
-
J. Mitros, C. Tsai, H. Shichijo, K. Kuntz, A. Morton, A. Goodpaster, D. Mosher, & T. Efland, "High-voltage Drain Extended MOS Transistors for 0.18 m Logic CMOS Process", IEEE Trans. Electron Devices, Vol. 48, pp 1751-1755, Aug 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 1751-1755
-
-
Mitros, J.1
Tsai, C.2
Shichijo, H.3
Kuntz, K.4
Morton, A.5
Goodpaster, A.6
Mosher, D.7
Efland, T.8
-
17
-
-
19244372853
-
Analog integration in a 0.35 μm Cu metal pitch, 0.1 μm gate length, low-power digital CMOS technology
-
A. Chatterjee, et al., "Analog Integration in a 0.35 μm Cu Metal Pitch, 0.1 μm Gate Length, Low-power Digital CMOS Technology", IEDM Tech. Digest, 2001, pp. 211.
-
(2001)
IEDM Tech. Digest
, pp. 211
-
-
Chatterjee, A.1
-
20
-
-
0035715830
-
max realized at 0.18um gate length in an industrial RF-CMOS technology
-
max realized at 0.18um gate length in an industrial RF-CMOS technology" IEDM Tech. Dig. pp. 223-226, 2001
-
(2001)
IEDM Tech. Dig.
, pp. 223-226
-
-
Tiemeijer, L.F.1
-
21
-
-
2442647552
-
A discrete-time Bluetooth receiver in a 0.13μm digital CMOS process
-
sec. 15.1, Feb.
-
K. Muhammad, D. Leipold, B. Staszewski, Y-C. Ho, C-M. Hung, K. Maggio, C. Fernando, T. Jung, J. Wallberg, J.-S. Koh, S. John, I. Deng, O. Moreira, R. Staszewski, R. Katz, O. Friedman, "A discrete-time Bluetooth receiver in a 0.13μm digital CMOS process," Proc. of IEEE Solid-State Circuits Conf, sec. 15.1, pp. 268-269, 527, Feb. 2004
-
(2004)
Proc. of IEEE Solid-state Circuits Conf
, pp. 268-269
-
-
Muhammad, K.1
Leipold, D.2
Staszewski, B.3
Ho, Y.-C.4
Hung, C.-M.5
Maggio, K.6
Fernando, C.7
Jung, T.8
Wallberg, J.9
Koh, J.-S.10
John, S.11
Deng, I.12
Moreira, O.13
Staszewski, R.14
Katz, R.15
Friedman, O.16
-
22
-
-
2442678899
-
All-digital phase-domain TX frequency synthesizer for Bluetooth radios in 0.13μm CMOS
-
sec. 15.3, Feb.
-
B. Staszewski, C-M. Hung, K. Maggio, J. Wallberg, D. Leipold and P. Balsara, "All-digital phase-domain TX frequency synthesizer for Bluetooth radios in 0.13μm CMOS," Proc. of IEEE Solid-Slate Circuits Conf, sec. 15.3, pp. 272-273, 527, Feb. 2004
-
(2004)
Proc. of IEEE Solid-slate Circuits Conf
, pp. 272-273
-
-
Staszewski, B.1
Hung, C.-M.2
Maggio, K.3
Wallberg, J.4
Leipold, D.5
Balsara, P.6
|