A 76-mm 2 8-Mb chain ferroelectric memory

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 11, 2001, Pages 1713-1720

  Takashima, Daisaburo ^a,b   Takeuchi, Yoshiaki ^b   Miyakawa, Tadashi ^b   Itoh, Yasuo ^b   Ogiwara, Ryu ^b   Kamoshida, Masahiro ^b   Hoya, Katsuhiko ^b   Doumae, Sumiko Mano ^b   Ozaki, Tohru ^b   Kanaya, Hiroyuki ^b   Yamakawa, Koji ^b   Kunishima, Iwao ^b   Oowaki, Yukihito ^a,b  

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Ferroelectric memory; Nonvolatile memory; Random access memory

Indexed keywords

CHAIN FERROELECTRIC MEMORY; FEATURE SIZE;

CMOS INTEGRATED CIRCUITS; FERROELECTRIC DEVICES; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; NONVOLATILE STORAGE; SCANNING ELECTRON MICROSCOPY;

RANDOM ACCESS STORAGE;

EID: 6644226557     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.962293     Document Type: Article

References (14)

1. A 16-kb ferroelectric nonvolatile memory with a bit parallel architecture
2. A 60-ns 1-Mb nonvolatile ferroelectric memory with nondriven cell plate line write/read scheme
3. 2 1-Mb nonvolatile ferroelectric memory utilizing advanced architecture for enhanced reliability
4. A 0.5-μm 3-V 1T1C FRAM with a variable reference bitline voltage scheme using a fatigue-free reference capacitor
5. A 3.3-V 4-Mb nonvolatile ferroelectric RAM with a selectively-driven double-pulsed plate read/write-back scheme
6. A 0.4-μm 3.3-V 1T/1C 4-Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection
7. High-density chain ferroelectric random access memory (chain FRAM)
8. A sub-40ns chain FRAM architecture with 7-ns cell-plateline drive
9. Gain cell block architecture for gigabit-scale chain ferroelectric RAM
10. A half-micron ferroelectric memory cell technology with stacked capacitor structure
11. 2 V cc/2-plate nonvolatile DRAM cell with Pt/PZT/Pt/TiN capacitor patterned by one-mask dry etching
12. A 5V-only 64 dynamic RAM based on high S/N design
13. 2 8-Mb chain ferroelectric memory
14. A 256-kb nonvolatile ferroelectric memory at 3 V and 100 ns