Retention after fatigue of ferroelectric memories

Integrated Ferroelectrics

Volumn 37, Issue 1-4, 2001, Pages 215-223

  Hadnagy, T Domokos ^a   Dalton, Dave ^b   Thomas, Becky ^a   Sun, Shan ^a   Bailey, Rick ^a  

^a Ramtron International Corporation   (United States)

^b CYPRESS SEMICONDUCTOR   (United States)

Author keywords

Fatigue; Ferroelectric memories; FRAM; Nonvolatile memory; Retention

Indexed keywords

DATA RETENTION; FERROELECTRIC MEMORIES;

BENCHMARKING; DATA REDUCTION; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS;

NONVOLATILE STORAGE;

EID: 0012256590     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108015680     Document Type: Conference Paper

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