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1
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0032279427
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On-chip spiral inductors with diffised shields using channel-stop implant
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T. Yoshitomi, Y. Sugawara, E. Morifuji, T. Ohguro, H. Kimijima, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "On-chip spiral inductors with diffised shields using channel-stop implant", Presented at EDM, December 1998
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(1998)
EDM
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Yoshitomi, T.1
Sugawara, Y.2
Morifuji, E.3
Ohguro, T.4
Kimijima, H.5
Morimoto, T.6
Momose, H.S.7
Katsumata, Y.8
Iwai, H.9
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2
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0004787174
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RF noise study of small gate width Si-MOSFETs up to 8 GHz application for low power consumption
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September
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E. Morifuji, C. E. Biber, W. Bachtold, T. Ohguro, T. Yoshitomi, H. Kidjima, T. Morimoto, H. S. Momose, Y. Kattsumata, and H. Iwai, "RF noise study of small gate width Si-MOSFETs up to 8 GHz application for low power consumption," Ext Abs. SSDM, pp.80-81, September, 1998
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(1998)
Ext Abs. SSDM
, pp. 80-81
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Morifuji, E.1
Biber, C.E.2
Bachtold, W.3
Ohguro, T.4
Yoshitomi, T.5
Kidjima, H.6
Morimoto, T.7
Momose, H.S.8
Kattsumata, Y.9
Iwai, H.10
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3
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0000347207
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Ultra-shallow junction and salicide technique for advanced CMOS devices
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T. Ohguro, S. Nakamura, M. Saito, M. Ono, H. Harakawa, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "Ultra-shallow junction and salicide technique for advanced CMOS devices," ECS Symp on ULSI Science and Technology, pp.275-295, 1997
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(1997)
ECS Symp on ULSI Science and Technology
, pp. 275-295
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Ohguro, T.1
Nakamura, S.2
Saito, M.3
Ono, M.4
Harakawa, H.5
Morifuji, E.6
Yoshitomi, T.7
Morimoto, T.8
Momose, H.S.9
Katsumata, Y.10
Iwai, H.11
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5
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0031639949
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Broadband 0.25 pm CMOS LNA with sub-2dE3 NF for GSM applications
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Q. Huang, P. Orsatti, F. Piazza, and T. Yoshitomi, "Broadband, 0.25 pm CMOS LNA with sub-2dE3 NF for GSM applications," CICC pp.67-70, 1998
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(1998)
CICC
, pp. 67-70
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Huang, Q.1
Orsatti, P.2
Piazza, F.3
Yoshitomi, T.4
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6
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0030407070
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High frequency AC characteristics of 1.5 nm gate oxide MOSFETs
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H. S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, T. Morimoto, Y. Katsumata, and H. Iwai, "High frequency AC characteristics of 1.5 nm gate oxide MOSFETs," IEDM Tech. Dig. pp.105-108, 1996
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(1996)
IEDM Tech. Dig
, pp. 105-108
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Momose, H.S.1
Morifuji, E.2
Yoshitomi, T.3
Ohguro, T.4
Saito, M.5
Morimoto, T.6
Katsumata, Y.7
Iwai, H.8
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8
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0032256946
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A study of flicker noise in n-and p-MOSFETs with ultra-thin gate oxide in the direct tunneling regime
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H. S. Momose, H. Kimijima, S. Nakamura, Y. Miyahara, T. Ohguro, T. Yoshitomi, E. Morifuji, T. Morimoto, Y. Katsumata, and H. Iwai, "A study of flicker noise in n-and p-MOSFETs with ultra-thin gate oxide in the direct tunneling regime," presented at EDM, December, 1998
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(1998)
EDM
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Momose, H.S.1
Kimijima, H.2
Nakamura, S.3
Miyahara, Y.4
Ohguro, T.5
Yoshitomi, T.6
Morifuji, E.7
Morimoto, T.8
Katsumata, Y.9
Iwai, H.10
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9
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0032276255
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0.12 pm raised gate/source/drain epitaxial channel NMOS technology
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T. Ohguro, H. Naruse, H. Sugaya, H. Kimijima, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "0.12 pm raised gate/source/drain epitaxial channel NMOS technology," presented at IEDM, December, 1998
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(1998)
IEDM
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-
Ohguro, T.1
Naruse, H.2
Sugaya, H.3
Kimijima, H.4
Morifuji, E.5
Yoshitomi, T.6
Morimoto, T.7
Momose, H.S.8
Katsumata, Y.9
Iwai, H.10
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