메뉴 건너뛰기




Volumn 7, Issue , 2004, Pages 1095-1106

Growth and morphological stability of nickel germano-silicide on strained Si1-xGex (X=0 to 0.25) under rapid thermal annealing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HOLE MOBILITY; MORPHOLOGY; SILICON; STRAIN; THERMAL EFFECTS; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

EID: 17044410938     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (17)
  • 1
    • 33646223247 scopus 로고    scopus 로고
    • Properties of Silicon Germanium and SiGe:carbon, Inspec, London, UK
    • E. Kasper, K. Lyotovich (Eds), Properties of Silicon Germanium and SiGe:carbon, Emis Datareviews Series No. 24 Inspec, London, UK, 2000.
    • (2000) Emis Datareviews Series No. 24 , vol.24
    • Kasper, E.1    Lyotovich, K.2
  • 17
    • 0027906591 scopus 로고
    • Nickel silicide, SiGe, morphological stability, agglomeration
    • P. Gas and F. M. d'Heurle, Appl. Surf. Sci., 73, 153, (1993) Nickel silicide, SiGe, morphological stability, agglomeration
    • (1993) Appl. Surf. Sci. , vol.73 , pp. 153
    • Gas, P.1    D'Heurle, F.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.