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Volumn 70, Issue 2-4, 2003, Pages 201-208

Thickness scaling issues of Ni silicide

Author keywords

NiSi; Sheet resistance; Thermal stability; Thickness scaling

Indexed keywords

ACTIVATION ENERGY; AGGLOMERATION; PYROLYSIS; THERMODYNAMIC STABILITY;

EID: 0142011595     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00366-6     Document Type: Conference Paper
Times cited : (33)

References (9)
  • 1
    • 0019038920 scopus 로고
    • Refractory silicides for integrated circuits
    • Murarka S.P. Refractory silicides for integrated circuits. J. Vac. Technol. 17:1980;775-792.
    • (1980) J. Vac. Technol. , vol.17 , pp. 775-792
    • Murarka, S.P.1
  • 2
    • 0035519420 scopus 로고    scopus 로고
    • Material aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 technologies
    • Lauwers A., Steegen A., de Potter M., Lindsay R., Satta A., Bender H., Maex K. Material aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 technologies. J. Vac. Technol. B. 19:2001;2026-2037.
    • (2001) J. Vac. Technol. B , vol.19 , pp. 2026-2037
    • Lauwers, A.1    Steegen, A.2    De Potter, M.3    Lindsay, R.4    Satta, A.5    Bender, H.6    Maex, K.7
  • 3
    • 0029310051 scopus 로고
    • Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI
    • Morimoto et al T. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI. IEEE Trans. Electron Dev. 42:1995;915-922.
    • (1995) IEEE Trans. Electron Dev. , vol.42 , pp. 915-922
    • Morimoto, T.1
  • 4
    • 0001188981 scopus 로고    scopus 로고
    • Salicidation process using NiSi and its device application
    • Deng F., Johnson R.A., Asbeck P.M., Lay S.S. Salicidation process using NiSi and its device application. J. Appl. Phys. 81:1997;8047-8051.
    • (1997) J. Appl. Phys. , vol.81 , pp. 8047-8051
    • Deng, F.1    Johnson, R.A.2    Asbeck, P.M.3    Lay, S.S.4
  • 6
    • 0001166327 scopus 로고
    • 2 on high-dose ion-implanted (100)Si
    • 2 on high-dose ion-implanted (100)Si. J. Appl. Phys. 71:1992;653-658.
    • (1992) J. Appl. Phys. , vol.71 , pp. 653-658
    • Chen, W.J.1    Chen, L.J.2
  • 9
    • 0345222451 scopus 로고    scopus 로고
    • +-implanted Si(100)
    • +-implanted Si(100). Appl. Phys. Lett. 81:2002;5138-5140.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 5138-5140
    • Wong, A.S.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.