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Volumn 772, Issue , 2003, Pages 3-15

Integration of Carbon Nanotubes Devices into Microelectronics

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST SELECTIVITY; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTROMIGRATION; HIGH TEMPERATURE EFFECTS; LASER ABLATION; MICROELECTRONICS; MOSFET DEVICES; SEMICONDUCTOR GROWTH; SILICON WAFERS; TRANSCONDUCTANCE;

EID: 1642541148     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-772-m4.5     Document Type: Conference Paper
Times cited : (12)

References (30)
  • 3
    • 0342819025 scopus 로고
    • S. Iijima, Nature 354 (1991) 56-58T.W. Ebbesen, P.M. Ajayan, Nature, 358, 220-222 (1992).
    • (1991) Nature , vol.354 , pp. 56-58
    • Iijima, S.1
  • 4
    • 2842547619 scopus 로고
    • S. Iijima, Nature 354 (1991) 56-58T.W. Ebbesen, P.M. Ajayan, Nature, 358, 220-222 (1992).
    • (1992) Nature , vol.358 , pp. 220-222
    • Ebbesen, T.W.1    Ajayan, P.M.2
  • 26
    • 17344376740 scopus 로고    scopus 로고
    • 100 nm Gate Length High Performance/Low Power CMOS Transistor Structure
    • T. Ghani et al., 100 nm Gate Length High Performance/Low Power CMOS Transistor Structure, Technical Digest IEDM (1999).
    • (1999) Technical Digest IEDM
    • Ghani, T.1
  • 27
    • 0036923438 scopus 로고    scopus 로고
    • FinFET Scaling to 10nm Gate Length
    • Bin Yu et al., FinFET Scaling to 10nm Gate Length, Technical Digest IEDM (2002).
    • (2002) Technical Digest IEDM
    • Yu, B.1
  • 28
    • 0036923554 scopus 로고    scopus 로고
    • Extreme Scaling with Ultra-Thin Si Channel MOSFETs
    • Bruce Doris et al., Extreme Scaling with Ultra-Thin Si Channel MOSFETs, Technical Digest IEDM (2002).
    • (2002) Technical Digest IEDM
    • Doris, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.