Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 11 B, 2003, Pages

  Liu, Yang ^a   Fu, Yong Qing ^b   Chen, Tu Pei ^a   Tse, Man Siu ^a   Fung, Steve ^c   Hsieh, Jang Hsing ^b   Yang, Xiao Hong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Depth profiling; Si ion Implantation; Si nanocrystals; Si oxidation states; XPS

Indexed keywords

ANNEALING; ELECTRONS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOCRYSTALS; OXIDATION STATES;

THIN FILMS;

EID: 1642454706     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1394     Document Type: Article

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