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Volumn 13, Issue 3, 1997, Pages 215-236

Mixed Finite Volume Methods for Semiconductor Device Simulation

Author keywords

Finite volumes; Mixed finite elements; Semiconductors

Indexed keywords


EID: 0001429680     PISSN: 0749159X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2426(199705)13:3<215::AID-NUM1>3.0.CO;2-Q     Document Type: Article
Times cited : (34)

References (34)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.