-
1
-
-
0028396643
-
A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions
-
M. J. VAN DORT, P. H. WOERLEE, and A. J. WALKER. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions. Solid-State Electronics 37(3):411-414 (1994).
-
(1994)
Solid-State Electronics
, vol.37
, Issue.3
, pp. 411-414
-
-
Van Dort, M.J.1
Woerlee, P.H.2
Walker, A.J.3
-
2
-
-
0001156050
-
Self-consistent results for n-type Si inversion layers
-
F. STERN. Self-consistent results for n-type Si inversion layers. Phys. Rev. B 5(12):4891-4899 (1972).
-
(1972)
Phys. Rev. B
, vol.5
, Issue.12
, pp. 4891-4899
-
-
Stern, F.1
-
3
-
-
0004124616
-
-
Ph. D. thesis, ETH Zürich, Hartung-Gorre, Konstanz. ISBN
-
A. WETTSTEIN. Quantum Effects in MOS Devices. Ph. D. thesis, ETH Zürich (2000). Hartung-Gorre, Konstanz. ISBN 3-89649-566-6.
-
(2000)
Quantum Effects in MOS Devices
-
-
Wettstein, A.1
-
5
-
-
0001719509
-
Smooth quantum potential for the hydrodynamic model
-
C. L. GARDNER and C. A. RINGHOFER. Smooth quantum potential for the hydrodynamic model. Phys. Rev. E 53(1):157-167 (1996).
-
(1996)
Phys. Rev. e
, vol.53
, Issue.1
, pp. 157-167
-
-
Gardner, C.L.1
Ringhofer, C.A.2
-
6
-
-
0000977058
-
Quantum correction to the equation of state of an electron gas in a semiconductor
-
M. G. ANCONA and G. J. IAFRATE. Quantum correction to the equation of state of an electron gas in a semiconductor. Phys. Rev. B 39(13):9536-9540 (1989).
-
(1989)
Phys. Rev. B
, vol.39
, Issue.13
, pp. 9536-9540
-
-
Ancona, M.G.1
Iafrate, G.J.2
-
7
-
-
0026839687
-
Ballistic phenomena in GaAs MESFETs: Modelling with quantum moment equations
-
J.-R. ZHOU and D. K. FERRY. Ballistic phenomena in GaAs MESFETs: Modelling with quantum moment equations. Semicond. Sci. Technol. 7(3B):B546-B548 (1992).
-
(1992)
Semicond. Sci. Technol.
, vol.7
, Issue.3 B
, pp. B546-B548
-
-
Zhou, J.-R.1
Ferry, D.K.2
-
8
-
-
0035249575
-
Quantum device-simulation with the density-gradient model on unstructured grids
-
A. WETTSTEIN, A. SCHENK, andW. FICHTNER. Quantum Device-Simulation with the Density-Gradient Model on Unstructured Grids. IEEE Trans. Electron Devices 48(2):279-284 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.48
, Issue.2
, pp. 279-284
-
-
Wettstein, A.1
Schenk, A.2
Fichtner, W.3
-
9
-
-
0000858448
-
Polysilicon quantization effects on the electrical properties of MOS transistors
-
A. S. SPINELLI, A. PACELLI, and A. L. LACAITA. Polysilicon Quantization Effects on the electrical properties of MOS transistors. IEEE Trans. Electron Devices 47(12):2366-2371 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.12
, pp. 2366-2371
-
-
Spinelli, A.S.1
Pacelli, A.2
Lacaita, A.L.3
-
10
-
-
0001871062
-
Simulation of quantum confinement effects in ultra-thin-oxide MOS structures
-
See
-
M. G. ANCONA, Z. YU, W.-C. LEE, R. W. DUTTON, and P. V. VOORDE. Simulation of quantum confinement effects in ultra-thin-oxide MOS structures. J. of Technology Comp. Aided Design (11) (1999). See http://www. ieee. org/products/online/journal/tcad/.
-
(1999)
J. of Technology Comp. Aided Design
, Issue.11
-
-
Ancona, M.G.1
Yu, Z.2
Lee, W.-C.3
Dutton, R.W.4
Voorde, P.V.5
-
11
-
-
84907560758
-
-
In H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, eds., ULSI Science and Technology. The Electrochemical Society, Inc., Pennington, NJ, USA (1997
-
A. WETTSTEIN, A. SCHENK, A. SCHOLZE, G. GARRETÓN, and W. FICHTNER. Charge carrier quantization effects in double-gated SOI MOSFETs. In H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, eds., ULSI Science and Technology 1997, pp. 613-621. The Electrochemical Society, Inc., Pennington, NJ, USA (1997).
-
(1997)
Charge Carrier Quantization Effects in Double-gated SOI MOSFETs
, pp. 613-621
-
-
Wettstein, A.1
Schenk, A.2
Scholze, A.3
Garretón, G.4
Fichtner, W.5
-
16
-
-
0031162957
-
Modeling and simulation of tunneling through ultra-thin gate dielectrics
-
A. SCHENK and G. HEISER. Modeling and simulation of tunneling through ultra-thin gate dielectrics. J. Appl. Phys. 81(12):7900-7908 (1997).
-
(1997)
J. Appl. Phys.
, vol.81
, Issue.12
, pp. 7900-7908
-
-
Schenk, A.1
Heiser, G.2
-
17
-
-
33744572650
-
Tunneling from a many-particle point of view
-
J. BARDEEN. Tunneling from a Many-Particle Point of View. Phys. Rev. Lett., 6(2):57-62 (1961).
-
(1961)
Phys. Rev. Lett.
, vol.6
, Issue.2
, pp. 57-62
-
-
Bardeen, J.1
-
18
-
-
34250911987
-
-
G. A. GAMOW. Zs. Phys. 51(3-4):204 (1928).
-
(1928)
Zs. Phys.
, vol.51
, Issue.3-4
, pp. 204
-
-
Gamow, G.A.1
-
19
-
-
0001611387
-
Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal-insulator-semiconductor capacitors
-
W. MAGNUS and W. SCHOENMAKER. Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal-insulator-semiconductor capacitors. J. Appl. Phys., 88(10):5833-5842 (2000).
-
(2000)
J. Appl. Phys.
, vol.88
, Issue.10
, pp. 5833-5842
-
-
Magnus, W.1
Schoenmaker, W.2
-
20
-
-
0001533067
-
Density-gradient analysis of MOS tunneling
-
M. G. ANCONA, Z. YU, R. W. DUTTON, P. J. V. VOORDE, M. CAO, and D. VOOK. Density-gradient analysis of MOS tunneling. IEEE Trans. Electron Devices 47(12):2310-2319 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.12
, pp. 2310-2319
-
-
Ancona, M.G.1
Yu, Z.2
Dutton, R.W.3
Voorde, P.J.V.4
Cao, M.5
Vook, D.6
-
21
-
-
84907503440
-
Integration of the density gradient model into a general purpose device simulator
-
A. WETTSTEIN, O. PENZIN, and E. LYUMKIS. Integration of the Density Gradient Model into a General Purpose Device Simulator. Submitted to VLSI Design
-
VLSI Design
-
-
Wettstein, A.1
Penzin, O.2
Lyumkis, E.3
|