메뉴 건너뛰기




Volumn , Issue , 2001, Pages 9-16

Physical modeling of deep-submicron devices

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-SUBMICRON DEVICES; PHYSICAL MODEL;

EID: 15944364926     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195198     Document Type: Conference Paper
Times cited : (6)

References (21)
  • 1
    • 0028396643 scopus 로고
    • A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions
    • M. J. VAN DORT, P. H. WOERLEE, and A. J. WALKER. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions. Solid-State Electronics 37(3):411-414 (1994).
    • (1994) Solid-State Electronics , vol.37 , Issue.3 , pp. 411-414
    • Van Dort, M.J.1    Woerlee, P.H.2    Walker, A.J.3
  • 2
    • 0001156050 scopus 로고
    • Self-consistent results for n-type Si inversion layers
    • F. STERN. Self-consistent results for n-type Si inversion layers. Phys. Rev. B 5(12):4891-4899 (1972).
    • (1972) Phys. Rev. B , vol.5 , Issue.12 , pp. 4891-4899
    • Stern, F.1
  • 3
    • 0004124616 scopus 로고    scopus 로고
    • Ph. D. thesis, ETH Zürich, Hartung-Gorre, Konstanz. ISBN
    • A. WETTSTEIN. Quantum Effects in MOS Devices. Ph. D. thesis, ETH Zürich (2000). Hartung-Gorre, Konstanz. ISBN 3-89649-566-6.
    • (2000) Quantum Effects in MOS Devices
    • Wettstein, A.1
  • 5
    • 0001719509 scopus 로고    scopus 로고
    • Smooth quantum potential for the hydrodynamic model
    • C. L. GARDNER and C. A. RINGHOFER. Smooth quantum potential for the hydrodynamic model. Phys. Rev. E 53(1):157-167 (1996).
    • (1996) Phys. Rev. e , vol.53 , Issue.1 , pp. 157-167
    • Gardner, C.L.1    Ringhofer, C.A.2
  • 6
    • 0000977058 scopus 로고
    • Quantum correction to the equation of state of an electron gas in a semiconductor
    • M. G. ANCONA and G. J. IAFRATE. Quantum correction to the equation of state of an electron gas in a semiconductor. Phys. Rev. B 39(13):9536-9540 (1989).
    • (1989) Phys. Rev. B , vol.39 , Issue.13 , pp. 9536-9540
    • Ancona, M.G.1    Iafrate, G.J.2
  • 7
    • 0026839687 scopus 로고
    • Ballistic phenomena in GaAs MESFETs: Modelling with quantum moment equations
    • J.-R. ZHOU and D. K. FERRY. Ballistic phenomena in GaAs MESFETs: Modelling with quantum moment equations. Semicond. Sci. Technol. 7(3B):B546-B548 (1992).
    • (1992) Semicond. Sci. Technol. , vol.7 , Issue.3 B , pp. B546-B548
    • Zhou, J.-R.1    Ferry, D.K.2
  • 8
    • 0035249575 scopus 로고    scopus 로고
    • Quantum device-simulation with the density-gradient model on unstructured grids
    • A. WETTSTEIN, A. SCHENK, andW. FICHTNER. Quantum Device-Simulation with the Density-Gradient Model on Unstructured Grids. IEEE Trans. Electron Devices 48(2):279-284 (2000).
    • (2000) IEEE Trans. Electron Devices , vol.48 , Issue.2 , pp. 279-284
    • Wettstein, A.1    Schenk, A.2    Fichtner, W.3
  • 9
    • 0000858448 scopus 로고    scopus 로고
    • Polysilicon quantization effects on the electrical properties of MOS transistors
    • A. S. SPINELLI, A. PACELLI, and A. L. LACAITA. Polysilicon Quantization Effects on the electrical properties of MOS transistors. IEEE Trans. Electron Devices 47(12):2366-2371 (2000).
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.12 , pp. 2366-2371
    • Spinelli, A.S.1    Pacelli, A.2    Lacaita, A.L.3
  • 10
    • 0001871062 scopus 로고    scopus 로고
    • Simulation of quantum confinement effects in ultra-thin-oxide MOS structures
    • See
    • M. G. ANCONA, Z. YU, W.-C. LEE, R. W. DUTTON, and P. V. VOORDE. Simulation of quantum confinement effects in ultra-thin-oxide MOS structures. J. of Technology Comp. Aided Design (11) (1999). See http://www. ieee. org/products/online/journal/tcad/.
    • (1999) J. of Technology Comp. Aided Design , Issue.11
    • Ancona, M.G.1    Yu, Z.2    Lee, W.-C.3    Dutton, R.W.4    Voorde, P.V.5
  • 11
    • 84907560758 scopus 로고    scopus 로고
    • In H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, eds., ULSI Science and Technology. The Electrochemical Society, Inc., Pennington, NJ, USA (1997
    • A. WETTSTEIN, A. SCHENK, A. SCHOLZE, G. GARRETÓN, and W. FICHTNER. Charge carrier quantization effects in double-gated SOI MOSFETs. In H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, eds., ULSI Science and Technology 1997, pp. 613-621. The Electrochemical Society, Inc., Pennington, NJ, USA (1997).
    • (1997) Charge Carrier Quantization Effects in Double-gated SOI MOSFETs , pp. 613-621
    • Wettstein, A.1    Schenk, A.2    Scholze, A.3    Garretón, G.4    Fichtner, W.5
  • 16
    • 0031162957 scopus 로고    scopus 로고
    • Modeling and simulation of tunneling through ultra-thin gate dielectrics
    • A. SCHENK and G. HEISER. Modeling and simulation of tunneling through ultra-thin gate dielectrics. J. Appl. Phys. 81(12):7900-7908 (1997).
    • (1997) J. Appl. Phys. , vol.81 , Issue.12 , pp. 7900-7908
    • Schenk, A.1    Heiser, G.2
  • 17
    • 33744572650 scopus 로고
    • Tunneling from a many-particle point of view
    • J. BARDEEN. Tunneling from a Many-Particle Point of View. Phys. Rev. Lett., 6(2):57-62 (1961).
    • (1961) Phys. Rev. Lett. , vol.6 , Issue.2 , pp. 57-62
    • Bardeen, J.1
  • 18
    • 34250911987 scopus 로고
    • G. A. GAMOW. Zs. Phys. 51(3-4):204 (1928).
    • (1928) Zs. Phys. , vol.51 , Issue.3-4 , pp. 204
    • Gamow, G.A.1
  • 19
    • 0001611387 scopus 로고    scopus 로고
    • Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal-insulator-semiconductor capacitors
    • W. MAGNUS and W. SCHOENMAKER. Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal-insulator-semiconductor capacitors. J. Appl. Phys., 88(10):5833-5842 (2000).
    • (2000) J. Appl. Phys. , vol.88 , Issue.10 , pp. 5833-5842
    • Magnus, W.1    Schoenmaker, W.2
  • 21
    • 84907503440 scopus 로고    scopus 로고
    • Integration of the density gradient model into a general purpose device simulator
    • A. WETTSTEIN, O. PENZIN, and E. LYUMKIS. Integration of the Density Gradient Model into a General Purpose Device Simulator. Submitted to VLSI Design
    • VLSI Design
    • Wettstein, A.1    Penzin, O.2    Lyumkis, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.